The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
Document Type
Article
Publication Date
10-1-2010
Abstract
Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1-XGeXlayer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs. © 2010 Chinese Physical Society and IOP Publishing Ltd.
Publication Source (Journal or Book title)
Chinese Physics B
Recommended Citation
Li, J., Liu, H., Li, B., Cao, L., & Yuan, B. (2010). The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs. Chinese Physics B, 19 (10) https://doi.org/10.1088/1674-1056/19/10/107301