Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs
Document Type
Article
Publication Date
10-1-2010
Abstract
Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime. © 2010 Chinese Physical Society and IOP Publishing Ltd.
Publication Source (Journal or Book title)
Chinese Physics B
Recommended Citation
Li, J., Liu, H., Li, B., Cao, L., & Yuan, B. (2010). Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs. Chinese Physics B, 19 (10) https://doi.org/10.1088/1674-1056/19/10/107302