Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators
Document Type
Article
Publication Date
3-1-2023
Abstract
Driving quantum phase transitions in the 3D topological insulators offers pathways to tuning the topological states and their properties. We use DFT-based calculations to systematically investigate topological phase transitions in Bi2Se3, Sb2Se3, Bi2Te3 and Sb2Te3 by varying the c / a ratio of lattice constants. This ensures no net hydrostatic pressure under anisotropic stress and strain and allows a clear identification of the physics leading to the transition. As a function of c / a , all of these materials exhibit structural and electronic stability of the quintuple layers (QLs), and quasi-linear behavior of both the inter-QL distance and the energy gap near the topological transition. Our results show that the transition is predominantly controlled by the inter-QL physics, namely by competing Coulomb and van der Waals interactions between the outer atomic sheets in neighboring QLs. We discuss the implications of our results for topological tuning by alloying.
Publication Source (Journal or Book title)
Electronic Structure
Recommended Citation
Shirali, K., Shelton, W., & Vekhter, I. (2023). Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators. Electronic Structure, 5 (1) https://doi.org/10.1088/2516-1075/acb6cc