Title
IIIB-2 A Vertical Field-Effect Transistor with an InGaAs/GaAs Pseudomorphic Planar Doped Barrier Launcher
Document Type
Article
Publication Date
1-1-1989
Publication Source (Journal or Book title)
IEEE Transactions on Electron Devices
First Page
2609
Last Page
2610
Recommended Citation
Won, Y., Yamasaki, K., Tasker, P., Daniels-Race, T., Schaff, W., & Eastman, L. (1989). IIIB-2 A Vertical Field-Effect Transistor with an InGaAs/GaAs Pseudomorphic Planar Doped Barrier Launcher. IEEE Transactions on Electron Devices, 36 (11), 2609-2610. https://doi.org/10.1109/16.43716
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