Improved Performance by Optimised Planar Doped Barrier Launcher in GaAs Vertical FET with Very Short Channel Width
Document Type
Article
Publication Date
9-1-1989
Abstract
The current-voltage characteristics of a GaAs vertical field effect transistor (VFET) with an n+ip+in+ planar doped barrier (PDB) launcher has been successfully improved by the optimisation of the launcher structure as well as the reduction of the channel width. Electron-beam direct writing has been used to obtain a small channel width of 0·1 ~ 0·15μm, resulting in good pinchoff characteristics. The measured maximum transconductances are 383 and 220 mS/mm at 77 and 300 K, respectively. In spite of a very short channel length (0·1 μm) and relatively low channel doping density (5 × 1016cm-3), a high voltage gain of 15 has been obtained. © 1989, The Institution of Electrical Engineers. All rights reserved.
Publication Source (Journal or Book title)
Electronics Letters
First Page
1413
Last Page
1414
Recommended Citation
Won, Y., Daniels-Race, T., Tasker, P., Schaff, W., Eastman, L., & Yamasaki, K. (1989). Improved Performance by Optimised Planar Doped Barrier Launcher in GaAs Vertical FET with Very Short Channel Width. Electronics Letters, 25 (21), 1413-1414. https://doi.org/10.1049/el:19890943
