Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection
Electron energy distribution on the drain edge of a channel in a GaAs nongated vertical field-effect transistor with hot-electron injection has been probed using hot-electron spectroscopy as a function of current density up to about 105 A/cm2. Electrons rapidly accelerated in an n+-i-p+-i-n+ planar-doped barrier source exhibit nonequilibrium transport through a thin channel (130 nm) with deceleration due to scattering and acceleration due to the electric field. The resulting hot-electron energy distribution, determined by using a planar-doped barrier as an analyzer, diverges from the steady-state one. This divergence dramatically increases with increasing the current density.
Publication Source (Journal or Book title)
Applied Physics Letters
Yamasaki, K., Daniels-Race, T., Lu, S., Schaff, W., Tasker, P., & Eastman, L. (1989). Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection. Applied Physics Letters, 54 (3), 274-276. https://doi.org/10.1063/1.100988