Structural and optical characterization of InAs nanostructures grown on high-index InP substrates
Document Type
Article
Publication Date
4-1-1999
Abstract
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular beam epitaxy are investigated in order to understand the self-organization of quantum dots and quantum wires on novel index surfaces. Four different InP substrate orientations have been examined, namely, (1 1 1)B, (3 1 1)A, and (3 1 1)B and (1 0 0). A rich variety of InAs nanostructures is formed on the surfaces. Quantum wire-like morphology is observed on the (1 0 0) surface, and evident island formation is found on (1 1 1)A and (3 1 1)B by atomic force microscopy. The photoluminescence spectra of InP (1 1 1)A and (3 1 1)B samples show typical QD features with PL peaks in the wavelength range 1.3-1.55 μm with comparable efficiency. These results suggest that the high-index substrates are promising candidates for production of high-quality self-organized QD materials for device applications.
Publication Source (Journal or Book title)
Journal of Crystal Growth
First Page
321
Last Page
325
Recommended Citation
Li, H., Daniels-Race, T., & Wang, Z. (1999). Structural and optical characterization of InAs nanostructures grown on high-index InP substrates. Journal of Crystal Growth, 200 (1-2), 321-325. https://doi.org/10.1016/S0022-0248(98)01254-8
