Title
High-density InAs nanowires realized in situ on (100) InP
Document Type
Article
Publication Date
8-23-1999
Abstract
High-density InAs nanowires embedded in an In0.25Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5×10 nm2. The linear density is as high as 70 wires/μm. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. © 1999 American Institute of Physics.
Publication Source (Journal or Book title)
Applied Physics Letters
First Page
1173
Last Page
1175
Recommended Citation
Li, H., Wu, J., Wang, Z., & Daniels-Race, T. (1999). High-density InAs nanowires realized in situ on (100) InP. Applied Physics Letters, 75 (8), 1173-1175. https://doi.org/10.1063/1.124633