Effect on optical band-gap of transparent and conductive CdIn2O4 thin film due to defects-induced Burstein-Moss and band-gap narrowing characteristics

Document Type

Article

Publication Date

2-1-2005

Abstract

Transparent and conductive oxides CdIn2O4(CIO) thin films were prepared by RF reactive sputtering from a Cd-In alloy target in Ar + O2 atmosphere. By the analysis and measurements of transmittance spectra and Hall-effect of different samples prepared at different substrate temperatures and post-deposition annealing in an Ar gas flow, it was found that the carrier density increases with the decrease of substrate temperature, but the absorption edge shows an abrupt change from a blue-shift to a red-shift. Theoretically, the paper formulated the effect on band structure due to higher density of point defects, it embodies the band-tailing, Burstein-Moss (B-M) shift and band-gap narrowing. In addition, density of ionized impurity substrate temperature induced will affect the carrier mobility. The hole density impurity-induced will influences the magnitude of optical band-gap and transmittance of light. Since extrapolation method does not fit degenerate materials, a more accurate method of obtaining band-gap is the method of curve fitting.

Publication Source (Journal or Book title)

Wuli Xuebao/Acta Physica Sinica

First Page

842

Last Page

847

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