Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films
Document Type
Article
Publication Date
7-1-2005
Abstract
Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequency reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmission spectrum and Hall measurement for different samples prepared at different substrate temperatures, it could be found that the carrier concentration would increase with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper formulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmittance of light. Since extrapolation method does not fit degenerate semiconductor materials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by altering substrate temperature will affect the carriers mobility. © 2005 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Thin Solid Films
First Page
245
Last Page
250
Recommended Citation
San, H., Li, B., Feng, B., He, Y., & Chen, C. (2005). Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films. Thin Solid Films, 483 (1-2), 245-250. https://doi.org/10.1016/j.tsf.2004.12.028