Dielectric mismatch effect on coupled shallow impurity states in a semiconductor nanowire

Document Type

Article

Publication Date

2-2-2009

Abstract

Coupled shallow impurity states in a freestanding semiconductor nanowire and in a semiconductor nanowire surrounded by a metallic gate are studied within the effective-mass approximation. Bonding and antibonding states are found due to the coupling of the two impurities, and their energy converges with increasing distance di between the two impurities. The dependences of the binding energy on the wire radius R, the distance di between the two impurities, and the impurity radial position in the nanowire are examined. © 2009 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B - Condensed Matter and Materials Physics

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