Document Type
Article
Publication Date
3-1-2009
Abstract
We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity. © 2008 Elsevier Ltd. All rights reserved.
Publication Source (Journal or Book title)
Microelectronics Journal
First Page
446
Last Page
448
Recommended Citation
Li, B., Partoens, B., Peeters, F., & Magnus, W. (2009). Dielectric mismatch effect on coupled impurity states in a freestanding nanowire. Microelectronics Journal, 40 (3), 446-448. https://doi.org/10.1016/j.mejo.2008.06.028