Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction

Document Type

Article

Publication Date

1-1-2010

Abstract

We report a study of the electrical bistability and bias-controlled spin valve effect in an organic device using rubrene (C42H28) as an organic semiconductor channel. The halfmetallic La0.7Sr 0.3MnO3 (LSMO) and Fe are used as the two ferromagnetic electrodes. The device displays reproducible switching between a low-impedance (ON) state and a highimpedance (OFF) state by applying different polarities of high biases. In the ON state, the device shows a spin valve effect with magnetoresistance values up to 3.75%. The observed spin valve effect disappears when the device recovers to the initial OFF state. © 2010 Elsevier B.V. All rights reserved.

Publication Source (Journal or Book title)

Organic Electronics

First Page

1149

Last Page

1153

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