Impact of electrode metals on a pentacene-based write-once read-many memory device
Document Type
Letter to the Editor
Publication Date
1-1-2010
Abstract
We report a pentacene-based bistable memory device using Fe as the top electrode and compare it to the Al/pentacene/Al devices. The device displays stable switching from the low-current OFF state to the high-current ON state and long retention time. Our results suggest that Fe has the advantage over Al as the top electrode because it lowers the switching threshold voltage. The Fe devices exhibit similar temperature-dependent behaviors with the reported Al/pentacene/Al devices [D. Tondelier, K. Lmimouni, D. Vuillaume, Appl. Phys. Lett. 85 (2004) 5763]. The device is promising as a write-once read-many (WORM) memory. © 2010 Elsevier B.V.
Publication Source (Journal or Book title)
Synthetic Metals
First Page
2385
Last Page
2388
Recommended Citation
Li, B., Yoo, J., Kao, C., & Epstein, A. (2010). Impact of electrode metals on a pentacene-based write-once read-many memory device. Synthetic Metals, 160 (21-22), 2385-2388. https://doi.org/10.1016/j.synthmet.2010.09.003