Electrical characteristics of SiGe-on-insulator nMOSFET and sige-silicon-on-aluminum nitride nMOSFET

Document Type

Article

Publication Date

12-1-2010

Abstract

This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures. © 2010 Chinese Physical Society and IOP Publishing Ltd.

Publication Source (Journal or Book title)

Chinese Physics B

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