Study on the far-field intensity distribution of high-power semiconductor Bar and Stack lasers

Document Type

Article

Publication Date

4-1-2012

Abstract

In this paper, the bi-peak model is applied on both Bar and Stack lasers. By superposition of intensity for each emitter non-coherently, the far-field intensity models of Bar and Stack lasers are obtained. According to this model, the distributions of far-field intensity of Bar and Stack lasers are simulated. For Bar and Stack lasers, quantitative descriptions of both homogeneously-distributed regions and the position where the distribution is similar to bi-peak distribution formed by a single emitter are given. The corresponding experienced formulas are also presented. By employing these formulas and the parameters on the datasheet, the homogeneously-distributed regions and the position where the distribution is similar to the bi-peak distribution formed by a single emitter can be easily found. The results are expected to provide a theoretical foundation for the design of optical systems and the evaluation of the laser beam quality in the practical application.

Publication Source (Journal or Book title)

Guangdianzi Jiguang/Journal of Optoelectronics Laser

First Page

667

Last Page

675

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