Room temperature synthesis of cubic boron nitride films by pulse high energy density plasma

Document Type

Article

Publication Date

3-1-1995

Abstract

Cubic boron nitride films have been prepared on the Si(100) oriented substrate at room temperature by a pulse high energy density plasma (PHEDP). The pulse plasma is generated in a coaxial plasma gun. The working gas was a mixture of 50%B2H6 + 50%N2. The structure of boron nitride films strongly depends on the voltages between inner and outer electrodes. The boron nitride films were characterized by scanning electron microscopy, electron diffraction and infrared absorption spectroscopy. © 1995.

Publication Source (Journal or Book title)

Journal of Crystal Growth

First Page

232

Last Page

235

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