A semianalytical parameter-extraction procedure for HBT equivalent circuit
Document Type
Article
Publication Date
12-1-1998
Abstract
A parameter-extraction approach for the heterojunction bipolar transistor (HBT), which combines the analytical approach and empirical optimization procedure, is developed. The extraction techniques for extrinsic base-collector capacitance and pad parasitics are also included in this approach. The cutoff operation of the HBT's is utilized to extract the values of the pad capacitances. An excellent fit between measured and simulated S-parameters in the frequency range of 50 MHz-36 GHz is obtained over a wide range of bias points. © 1998 IEEE.
Publication Source (Journal or Book title)
IEEE Transactions on Microwave Theory and Techniques
First Page
1427
Last Page
1435
Recommended Citation
Li, B., Prasad, S., Yang, L., & Wang, S. (1998). A semianalytical parameter-extraction procedure for HBT equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 46 (10 PART 1), 1427-1435. https://doi.org/10.1109/22.721144