Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBT using volterra series

Document Type

Article

Publication Date

12-1-1998

Abstract

The intermodulation (IM) distortion of the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor (HBT) is analyzed using Volterra-series theory. A T-equivalent circuit is used for this analysis. The contribution and interaction of four nonlinear elements: base-emitter resistance, base-emitter capacitance, base-collector capacitance, and common base-current gain are analyzed. For the particular device under investigation, it is found that the cancellation effect is not significant and the base-emitter resistance nonlinearity dominates the third-order IM. © 1998 IEEE.

Publication Source (Journal or Book title)

IEEE Transactions on Microwave Theory and Techniques

First Page

1321

Last Page

1323

This document is currently not available here.

Share

COinS