Basic expressions and approximations in small-signal parameter extraction for HBT's

Document Type

Article

Publication Date

1-1-1999

Abstract

Basic expressions and approximations used to extract small-signal parameters for heterojunction bipolar transistors or bipolar junction transistors are developed in this paper. A T-type small-signal equivalent circuit after deembedding the pad capacitances is used for the derivation. The relative magnitudes of wRbcCbc, wRbiCbc, and wreCbeO were used to evaluate the frequency ranges. Fully numerical or partially numerical approaches can be developed by these approximations. An element parameter-extraction procedure is also given in this paper. Two special cases ('cold' bias and degrading equivalent circuits) are also discussed.

Publication Source (Journal or Book title)

IEEE Transactions on Microwave Theory and Techniques

First Page

534

Last Page

539

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