Large-signal characterization of AlGaAs/GaAs HBT's

Document Type

Article

Publication Date

12-1-1999

Abstract

A modified Ebers-Moll levels model is developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's). The self-heating effect is modeled by a thermal-electrical sub-circuit. The model is verified by comparing the large-signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low dc power dissipation. The discrepancy between simulation and measurement when the HBT is biased at high dc power dissipation is explained by considering the self-heating effect under large-signal RF excitation. © 1999 IEEE.

Publication Source (Journal or Book title)

IEEE Transactions on Microwave Theory and Techniques

First Page

1

Last Page

4

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