Document Type
Article
Publication Date
1-1-2004
Abstract
Pb1-xGexTe is a pseudobinary alloy of IV-VI narrow-gap semiconductor, of which maximum refractive index corresponds to the ferroelectric phase transition. Since the temperature coefficient of refractive index can be tunable from negative to positive by changing the Ge composition, it is possible to utilize the intrinsic property in the fabrication of infrared thin-film interference filters. In this letter, we report a narrow-bandpass filter, in which Pb0.94Ge0.06Te was substituted for PbTe. It found that the low-temperature stability of the filter is obviously improved: in the temperature range of 80-300K, the shift of center wavelength with temperature is reduced from 0.48nm.K-1 to 0.23nm K-1; furthermore, the peak transmittance of filter fabricated with Pb 0.94Ge0.06Te is ∼3% over that fabricated with PbTe. © 2004 Optical Society of America.
Publication Source (Journal or Book title)
Optics Express
First Page
401
Last Page
404
Recommended Citation
Li, B., Zhang, S., Jiang, J., Fan, B., & Zhang, F. (2004). Improving low-temperature performance of infrared thin-film interference filters utilizing the intrinsic properties of IV-VI narrow-gap semiconductors. Optics Express, 12 (3), 401-404. https://doi.org/10.1364/OPEX.12.000401