Magnetotransport properties of epitaxial films and Hall bar devices of the correlated layered ruthenate Sr3Ru2 O7

Document Type

Article

Publication Date

4-1-2024

Abstract

For epitaxial Sr3Ru2O7 films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using x-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nearly phase pure. For magnetic fields applied along the c axis, a positive magnetoresistance of 10% is measured for unpatterned Sr3Ru2O7 films, whereas for patterned Hall bar devices of channel widths of 10 and 5μm, magnetoresistance values of 40% and 140% are found, respectively. These films show switching behaviors from positive to negative magnetoresistance that are controlled by the direction of the applied magnetic field. The present results provide a promising route for achieving stable epitaxial synthesis of intermediate members of correlated layered strontium ruthenates, and for the exploration of device physics in thin films of these compounds.

Publication Source (Journal or Book title)

Physical Review Materials

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