Configurational dephasing in a weak-localization experiment

Document Type

Article

Publication Date

1-1-1989

Abstract

We have determined the dephasing time for the two-dimensional electron gas on the surface of a H2 crystal from low-field magnetoresistance measurements. We find that a moderate amount of helium gas above the H2 surface causes large increases in resistivity, but unexpectedly small negative magnetoresistance effects. We attribute this to a suppression of weak localization as a result of the dephasing effect of the thermal motion of helium atoms normal to the H2 surface. © 1989 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B

First Page

4733

Last Page

4735

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