Document Type

Article

Publication Date

4-1-2025

Abstract

We report the perpendicular critical field Hc2 properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a d Re = 3 nm bottom layer of Re and an upper Al layer with thickness varying between dAl = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature Tc increases with increasing Al thickness, although their monolayer counterparts have T c Re > T c Al . Furthermore, Hc2 of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses Hc2 drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.

Publication Source (Journal or Book title)

Materials Research Express

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