4f-electron localization in Ce xLa 1-xMIn 5 with M = Co, Rh, or Ir
The results of a de Haas-van Alphen (dHvA) study on the alloy series Ce xLa 1-xMIn 5, with M = Co, Rh, or Ir, are presented. It was suggested that 4f-electron localization is the primary driving factor for quantum criticality in the p, M phase diagram of Ce compounds. The close correspondence between ferromagnetism and f-electron localization were suggested to be similar to that observed between ferromagnetism and f-electron localization reported in systems such as CeRu 2Si 2. Fermi-liquid state to form for any x in the case of M = Rh was found to be inconsistent with theoretical models that propose antiferromagnetism to result from spin-density-wave formation.
Publication Source (Journal or Book title)
Physical Review Letters
Harrison, N., Alver, U., Goodrich, R., Vekhter, I., Sarrao, J., Pagliuso, P., Moreno, N., Balicas, L., Fisk, Z., Hall, D., Macaluso, R., & Chan, J. (2004). 4f-electron localization in Ce xLa 1-xMIn 5 with M = Co, Rh, or Ir. Physical Review Letters, 93 (18) https://doi.org/10.1103/PhysRevLett.93.186405