4f-electron localization in Ce xLa 1-xMIn 5 with M = Co, Rh, or Ir

Authors

N. Harrison, National High Magnetic Field Laboratory Los Almos
U. Alver, Kahramanmaras Sütçü Imam Üniversitesi
R. G. Goodrich, Louisiana State University
I. Vekhter, Louisiana State University
J. L. Sarrao, Los Alamos National Laboratory
P. G. Pagliuso, Los Alamos National Laboratory
N. O. Moreno, Los Alamos National Laboratory
L. Balicas, National High Magnetic Field Laboratory
Z. Fisk, National High Magnetic Field Laboratory
D. Hall, National High Magnetic Field Laboratory
Robin T. Macaluso, Louisiana State University
Julia Y. Chan, Louisiana State University

Document Type

Article

Publication Date

10-29-2004

Abstract

The results of a de Haas-van Alphen (dHvA) study on the alloy series Ce xLa 1-xMIn 5, with M = Co, Rh, or Ir, are presented. It was suggested that 4f-electron localization is the primary driving factor for quantum criticality in the p, M phase diagram of Ce compounds. The close correspondence between ferromagnetism and f-electron localization were suggested to be similar to that observed between ferromagnetism and f-electron localization reported in systems such as CeRu 2Si 2. Fermi-liquid state to form for any x in the case of M = Rh was found to be inconsistent with theoretical models that propose antiferromagnetism to result from spin-density-wave formation.

Publication Source (Journal or Book title)

Physical Review Letters

Recommended Citation

Harrison, N., Alver, U., Goodrich, R., Vekhter, I., Sarrao, J., Pagliuso, P., Moreno, N., Balicas, L., Fisk, Z., Hall, D., Macaluso, R., & Chan, J. (2004). 4f-electron localization in Ce xLa 1-xMIn 5 with M = Co, Rh, or Ir. Physical Review Letters, 93 (18) https://doi.org/10.1103/PhysRevLett.93.186405