Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

Authors

Ruihua Cheng, University of Nebraska–Lincoln
C. N. Borca, University of Nebraska–Lincoln
P. A. Dowben, University of Nebraska–Lincoln
Shane Stadler, Naval Research Laboratory
Y. U. Idzerda, Naval Research Laboratory

Document Type

Article

Publication Date

1-22-2001

Abstract

We have used laser-initiated chemical vapor deposition to grow the chromium oxide thin films through the oxidation of Cr(CO)6 in an oxygen environment. While both Cr2O3 and CrO2 are present in the film, the relative weight of each phase depends on the oxygen partial pressure. The Curie temperature of the film increases and approaches the bulk Tc of CrO2 (397 K) as the partial oxygen pressure is increased. © 2001 American Institute of Physics.

Publication Source (Journal or Book title)

Applied Physics Letters

First Page

521

Last Page

523

Recommended Citation

Cheng, R., Borca, C., Dowben, P., Stadler, S., & Idzerda, Y. (2001). Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition. Applied Physics Letters, 78 (4), 521-523. https://doi.org/10.1063/1.1343846