Bulk-defect dependent adsorption on a metal oxide surface: S/TiO2(1 1 0)
Document Type
Article
Publication Date
7-10-2001
Abstract
The adsorption of molecular sulfur on TiO2(1 1 0)(1 × 1) has been studied with scanning tunneling microscopy and photoelectron spectroscopy. At room temperature S binds dissociatively to 5-fold coordinated Ti atoms and oxygen vacancies. At elevated temperatures (120-440°C) sulfur replaces surface oxygen atoms. Evidence was found that the reduction state of TiO2 crystals strongly affects the surface coverage of S at elevated temperatures. The rate of the O-S site exchange is kinetically limited by the arrival of diffusing bulk defects at the surface. © 2001 Elsevier Science B.V. All rights reserved.
Publication Source (Journal or Book title)
Surface Science
Recommended Citation
Hebenstreit, E., Hebenstreit, W., Geisler, H., Ventrice, C., Sprunger, P., & Diebold, U. (2001). Bulk-defect dependent adsorption on a metal oxide surface: S/TiO2(1 1 0). Surface Science, 486 (3) https://doi.org/10.1016/S0039-6028(01)01067-6