Transmission of electromagnetic radiation through an electron inversion layer of finite thickness in a metal-oxide-semiconductor (MOS) structure
Document Type
Article
Publication Date
1-1-1982
Abstract
We investigate the transmission coefficient for propagation of electromagnetic radiation, of frequency ω, through an electron inversion layer, of finite thickness d, in the metal-oxide-semiconductor (MOS) structure. The corresponding result in the case where the inversion layer is treated as infinitely thin (two-dimensional electron gas) has been given by Chiu et al. Subject to the assumptions ωd/c ≪ 1 and constant density, it is possible to establish a point of contact between the finite d result and the Chiu et al. result. This comparison demonstrates that it is a good approximation to treat the inversion layer as a two-dimensional system and also provides a recipe for the calculation of the surface conductivity σ(2), viz. σ(2) = σd, where σ is the three-dimensional conductivity. © 1982.
Publication Source (Journal or Book title)
Physica B+C
First Page
1
Last Page
4
Recommended Citation
O'Connell, R., & Wallace, G. (1982). Transmission of electromagnetic radiation through an electron inversion layer of finite thickness in a metal-oxide-semiconductor (MOS) structure. Physica B+C, 115 (1), 1-4. https://doi.org/10.1016/0378-4363(82)90048-1
