Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

Document Type

Article

Publication Date

1-1-1983

Abstract

We have previously calculated the Faraday rotation due to the inversion layer in a metal-oxide-semiconductor system, using both a three-dimensional model and a two-dimensional model for the inversion layer. However, in the limit of the inversion-layer thickness going to zero, the results for both models should be the same, but they are not. Here we show that if the three-dimensional model is extended to include multiple-reflection effects within the inversion layer, we do get agreement. We conclude that the two-dimensional model automatically takes multiple-reflection effects within the inversion layer into account and that this also explains the source of the dependence of the Faraday rotation on the oxide layer which we previously obtained in the case of the two-dimensional model. © 1983 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B

First Page

5901

Last Page

5903

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