Coulomb gap: How a metal film becomes an insulator

Authors

V. Y.U. Butko, Louisiana State University
J. F. DiTusa, Louisiana State University
P. W. Adams, Louisiana State University

Document Type

Article

Publication Date

1-1-2000

Abstract

Electron tunneling measurements of the density of states (DOS) in ultrathin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance Rln(V) Efros-Shklovskii Coulomb gap spectrum finally emerges in the highest R films. Transport measurements of films which display this gap are well described by a universal variable range hopping law R(T) = (h/2e2)exp(T0/T)1/2. © 2000 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review Letters

First Page

1543

Last Page

1546

Recommended Citation

Butko, V., DiTusa, J., & Adams, P. (2000). Coulomb gap: How a metal film becomes an insulator. Physical Review Letters, 84 (7), 1543-1546. https://doi.org/10.1103/PhysRevLett.84.1543