Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects

Authors

• Junghyun Park, Cain Department of Chemical Engineering
• Ignace Agbadan, Cain Department of Chemical Engineering
• Monsuru Dauda, Cain Department of Chemical Engineering
• Mustapha Bello, Cain Department of Chemical Engineering
• John Hendershot, Cain Department of Chemical Engineering

Document Type

Article

Publication Date

11-1-2025

Abstract

Highlights The Cu-epoxy interface performance is studied over 1500 temperature cycles. The temperature stability of organic and metal interlayers is studied for Cu-epoxy. Organic adhesion promoters, such as silane and azole, improve initial adhesion. Electroless CoW0.66P0.17 interface enhances adhesion due to its stable oxides. The CoW0.66P0.17 shows stability with a 0.02 dB mm⁻¹ S21 change after 1500 cycles.

Publication Source (Journal or Book title)

Ecs Journal of Solid State Science and Technology

Recommended Citation

Park, J., Agbadan, I., Dauda, M., Bello, M., & Hendershot, J. (2025). Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects. Ecs Journal of Solid State Science and Technology, 14 (11) https://doi.org/10.1149/2162-8777/ae170a