Doped C 60 study from first principles simulation
Document Type
Article
Publication Date
8-1-2010
Abstract
We have performed first principles density functional theory method simulations on electronic structures of B, N, Co, P, and Bi doped C 60 solids. Our electronic structure simulations show that boron, phosphorous, and cobalt doped face-centered cubic (FCC) C 60 solids have the electronic structures of n-type semiconductors. Nitrogen doped FCC C 60 solid has an electronic structure similar to those of a p-type semiconductor. P doped C 60 is a potential good candidate in thermoelectric application. For Bi doped C 60, a transformation from n-type to p-type semiconductor and gradually to metal, which corresponding to the Bi:C 60 dopant ratio at 1:60, 2:60, and 3:60, respectively, can be seen from our electronic density of states (DOS) analysis. There are volume contraction and charge transfer increasing in the 2:60 of Bi doped C 60 results compared with those of 1:60 Bi doped C 60 case. The charge transfer at a tetrahedral site is as three times larger as that of octahedral site. For the concentration of Bi doped C 60 higher than 3:60, the system is expected to be a superconductor. © 2010 Springer Science+Business Media, LLC.
Publication Source (Journal or Book title)
Journal of Superconductivity and Novel Magnetism
First Page
877
Last Page
880
Recommended Citation
Yang, S., Guo, S., Bai, S., Khosravi, E., Zhao, G., & Bagayoko, D. (2010). Doped C 60 study from first principles simulation. Journal of Superconductivity and Novel Magnetism, 23 (6), 877-880. https://doi.org/10.1007/s10948-010-0649-4