Photo Effect Studies in Graphene/n-GaAs Schottky Junction Using NEGF Method for Photovoltaic Application

Document Type

Conference Proceeding

Publication Date

1-1-2022

Abstract

In this paper, we present the photovoltaic characteristics of nanoscale Schottky junction solar cell consisting of graphene and GaAs using numerical simulation based on non-equilibrium Green’s function formalism. In our model, light-matter interaction is formulated by the coupling and scattering self-energy matrices whereas heterostructure is designed with a Hamiltonian matrix. An efficiency of 2.36% is obtained for monolayer graphene on GaAs; the efficiency is later enhanced to 5.40% by increasing the number of graphene layers and the doping concentration of GaAs. The parameters to calculate power conversion efficiency, series and shunt resistances are extracted from the J-V characteristic. The I-V characteristic is also numerically simulated to extract reverse saturation current, ideality factor, and rectification ratio. Moreover, the power density is calculated for the optimized structure; the maximum power density of 7.46 mW/cm2 is obtained for four layers of graphene and a doping concentration of 1017 /cm3 in GaAs.

Publication Source (Journal or Book title)

Key Engineering Materials

First Page

24

Last Page

31

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