Electron velocity enhancement by planar-doped barrier source in gaas vertical fet

Document Type

Article

Publication Date

1-1-1988

Abstract

Experimental evidence of electron velocity enhancement by hot-electron injection into the channel of a GaAs vertical FET has been obtained for the first time. The maximum transconductance and the average electron velocity are 234mS/mm and 6-4 × 107cm/s, which are 1-4 and 1-9 times as large as those of a conventional vertical FET. © 1988, The Institution of Electrical Engineers. All rights reserved.

Publication Source (Journal or Book title)

Electronics Letters

First Page

1383

Last Page

1384

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