Observation of ballistic transport in hot-electron vertical fet spectrometer using ultrathin planar-doped barrier launcher

Authors

T. Daniels-race, Duke University
K. Yamasaki, Nippon Telegraph and Telephone Corporation
W. J. Schaff, Cornell University
L. F. Eastman, Cornell University

Document Type

Article

Publication Date

2-1-1991

Abstract

Experimental evidence of ballistic transport by hot electron injection into a GaAs vertical FET channel using an ultrathin planar-doped barrier has been obtained for the first time. The spectroscopy exhibited a narrow energy spread of less than 50meV with an estimated 10% ballistic electrons. © 1991, The Institution of Electrical Engineers. All rights reserved.

Publication Source (Journal or Book title)

Electronics Letters

First Page

1144

Last Page

1145

Recommended Citation

Daniels-race, T., Yamasaki, K., Schaff, W., & Eastman, L. (1991). Observation of ballistic transport in hot-electron vertical fet spectrometer using ultrathin planar-doped barrier launcher. Electronics Letters, 27 (13), 1144-1145. https://doi.org/10.1049/el:19910713