Effect of spacer layer thickness on tunneling characteristics in asymmetric AlAs/GaAs/AlAs double barrier structures
Document Type
Article
Publication Date
1-1-1995
Abstract
We present a first-time study of the effects of variable thickness undoped spacer layers of asymmetric AlAs/GaAs/AlAs double barrier structures on resonant tunneling current-voltage (I-V) characteristics. Although tunneling characteristics are only observed in the negative voltage sweep of the I-V curve, these structures do exhibit increased current density (jp) with increased spacer layer thickness (Lsp) until a threshold thickness of Lsp > 10 nm is reached. Above Lsp = 10 nm, current density decreases. A modified asymmetric double barrier structure with reduced overall emitter-collector layer thickness was also examined. The latter provided insight into sample optimization as more prominent resonant tunneling characteristics were observed in comparison to the original structures. © 1995.
Publication Source (Journal or Book title)
Solid State Electronics
First Page
1347
Last Page
1349
Recommended Citation
Daniels-Race, T., & Yu, S. (1995). Effect of spacer layer thickness on tunneling characteristics in asymmetric AlAs/GaAs/AlAs double barrier structures. Solid State Electronics, 38 (7), 1347-1349. https://doi.org/10.1016/0038-1101(94)00252-B
