Design of a Hybrid SET-TFET Nanoscale IC for RF and Microwave Frequencies

Document Type

Conference Proceeding

Publication Date

1-1-2022

Abstract

Device size has now reached the nanoscale range due to advancements in technology and scaling in the fields of very large-scale integration. The single-electron transistor (SET) is a promising solid-state device that can provide an extension for Moore's law and is suitable for next-generation nanoelectronics design and application. Due to the Coulomb oscillation properties of the SET in addition to the high gain and ultra-low power consumption of the tunnel field effect transistor (TFET), the implementation of the hybrid SET/TFET will primarily benefit high density (nanoscale), low-power integrated circuits (ICs), and fast switching devices. In this study, we present a hybrid model of a graphene-based single electron transistor [1] with an n-type double-gate graphene nanoribbon TFET structure [2] utilized as an integrator. For simplicity, the TFET is used in the shorted gate configuration by connecting both the front and back gates. Following this, we design a fourth order analog low pass filter using the integrator circuit of SET/TFET. With the implementation in SPICE and Matlab, we analyze the transfer function of our proposed filter from its frequency characteristics (Bode plot). Our findings reveal significant roll-off and, as a consequence, increased filtering functions with low power consumption. This study adds to the realization and implementation of SET/TFET into applications where high frequency contributes to the reliability, performance, and low power required for nanoscale devices and designs.

Publication Source (Journal or Book title)

Proceedings of SPIE - The International Society for Optical Engineering

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