Title
Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates
Document Type
Article
Publication Date
1-1-2000
Abstract
Incursive chiGa1-cursive chiAs self-organized quantum dots with cursive chi = 1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on cursive chi. The dot shape changes from a round shape for cursive chi = 1.0 to an elliptical shape for cursive chi≤0.5. The major axis and minor axis of the elliptical Incursive chiGa1-cursive chiAs dots are along the [110] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot-dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.
Publication Source (Journal or Book title)
Journal of Applied Physics
First Page
188
Last Page
191
Recommended Citation
Li, H., Zhuang, Q., Wang, Z., & Daniels-Race, T. (2000). Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates. Journal of Applied Physics, 87 (1), 188-191. https://doi.org/10.1063/1.371842