Title
Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)
Document Type
Conference Proceeding
Publication Date
7-1-2001
Abstract
The origin and nature of self-organized InAs nanowires were studied. It was shown that the formation of these nanowires is driven by lateral composition modulation in the AlInAs buffer layer. By varying the spacer layer thickness, a transition from lateral correlation to vertical correlation does not occur under the investigated growth conditions.
Publication Source (Journal or Book title)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
First Page
1471
Last Page
1474
Recommended Citation
Li, H., Daniels-Race, T., & Hasan, M. (2001). Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 (4), 1471-1474. https://doi.org/10.1116/1.1386383