Title
Thermal metallorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications
Document Type
Conference Proceeding
Publication Date
12-1-1996
Abstract
Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here we present results on purely thermal metallorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 °C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0-20 at.%. Typical impurity contents are 5-10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1000 μΩ-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.
Publication Source (Journal or Book title)
Materials Research Society Symposium - Proceedings
First Page
343
Last Page
348
Recommended Citation
Custer, J., Smith, P., Jones, R., Maverick, A., Roberts, D., Norman, J., & Hochberg, A. (1996). Thermal metallorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications. Materials Research Society Symposium - Proceedings, 427, 343-348. Retrieved from https://repository.lsu.edu/chemistry_pubs/807