Title
Gateless AlGaN/GaN HEMT response to block co-polymers
Document Type
Article
Publication Date
5-1-2004
Abstract
Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing. © 2003 Elsevier Ltd. All rights reserved.
Publication Source (Journal or Book title)
Solid-State Electronics
First Page
851
Last Page
854
Recommended Citation
Kang, B., Louche, G., Duran, R., Gnanou, Y., Pearton, S., & Ren, F. (2004). Gateless AlGaN/GaN HEMT response to block co-polymers. Solid-State Electronics, 48 (5), 851-854. https://doi.org/10.1016/j.sse.2003.10.002