Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects

Authors

• Junghyun Park, Cain Department of Chemical Engineering
• Ignace Agbadan, Cain Department of Chemical Engineering
• Monsuru Dauda, Cain Department of Chemical Engineering
• Mustapha Bello, Cain Department of Chemical Engineering
• John Hendershot, Cain Department of Chemical Engineering
• Soundarzo Tasnim, Cain Department of Chemical Engineering
• Omotolani Oduyebo, Cain Department of Chemical Engineering

Document Type

Article

Publication Date

11-1-2025

Abstract

Highlights The Cu-epoxy interface performance is studied over 1500 temperature cycles. The temperature stability of organic and metal interlayers is studied for Cu-epoxy. Organic adhesion promoters, such as silane and azole, improve initial adhesion. Electroless CoW0.66P0.17 interface enhances adhesion due to its stable oxides. The CoW0.66P0.17 shows stability with a 0.02 dB mm⁻¹ S21 change after 1500 cycles.

Publication Source (Journal or Book title)

Ecs Journal of Solid State Science and Technology

Recommended Citation

Park, J., Agbadan, I., Dauda, M., Bello, M., Hendershot, J., Tasnim, S., & Oduyebo, O. (2025). Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects. Ecs Journal of Solid State Science and Technology, 14 (11) https://doi.org/10.1149/2162-8777/ae170a