Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology
Document Type
Article
Publication Date
8-1-2004
Abstract
We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations. © 2004 IEEE.
Publication Source (Journal or Book title)
IEEE Electron Device Letters
First Page
520
Last Page
522
Recommended Citation
He, G., Howard, J., Le, M., Partyka, P., Li, B., Kim, G., Hess, R., Bryie, R., Lee, R., Rustomji, S., Pepper, J., Kail, M., Helix, M., Elder, R., Jansen, D., Harff, N., Prairie, J., Daniel, E., & Gilbert, B. (2004). Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology. IEEE Electron Device Letters, 25 (8), 520-522. https://doi.org/10.1109/LED.2004.832528
