New advances in improving low-temperature stability of infrared thin-film interference filters
Document Type
Conference Proceeding
Publication Date
12-1-2005
Abstract
The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb1-xGexTe initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrow-band filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb1-xGex) 1-yTey layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K-1 has been achieved.
Publication Source (Journal or Book title)
Proceedings of SPIE - The International Society for Optical Engineering
Recommended Citation
Li, B., Zhang, S., Liu, D., & Zhang, F. (2005). New advances in improving low-temperature stability of infrared thin-film interference filters. Proceedings of SPIE - The International Society for Optical Engineering, 5963 https://doi.org/10.1117/12.625375