Self-aligned InP DHBTs for 150GHz digital and mixed signal circuits
Document Type
Conference Proceeding
Publication Date
12-1-2005
Abstract
A production oriented manufacturing process for Indium Phosphide double-heterojunction bipolar transistor (DHBT) devices that enables 150GHz digital and mixed signal circuits is presented. These transistors have cut-off frequency (f ) and maximum oscillation frequency (f max) both over 300 GHz and open-base breakdown voltage (BV ceo) over 4 V. Common Mode Logic (CML) ring oscillators have exhibited 1.95 ps gate delay and Emitter Coupled Logic (ECL) static frequency dividers that operate up to 152GHz have been demonstrated to benchmark this InP process technology. A 4:1 multiplexer for 100 Gb/s circuits is discussed along with a Gilbert cell Variable Gain Amplifier with excess of 50GHz bandwidth and record gain bandwidth product of 397 GHz. © 2005 IEEE.
Publication Source (Journal or Book title)
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
First Page
325
Last Page
330
Recommended Citation
Le, M., He, G., Hess, R., Partyka, P., Li, B., Bryie, R., Rustomji, S., Kim, G., Lee, R., Pepper, J., Helix, M., Milano, R., Elder, R., Jansen, D., Stroili, F., Lai, J., & Feng, M. (2005). Self-aligned InP DHBTs for 150GHz digital and mixed signal circuits. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2005, 325-330. https://doi.org/10.1109/ICIPRM.2005.1517493