GaAs HBT microwave power transistor with on-chip stabilization network

Document Type

Article

Publication Date

12-1-2006

Abstract

An InGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process. From the stability factor K, the device shows unconditional stability in a wide frequency range due to the RC network. The power characteristics of the device as measured by a load-pull system show that the large-signal performance of the power transistor is affected slightly by the RC network. Psat is 30 dBm at 5.4 GHz, and P1dB is larger than 21.6 dBm at 11 GHz. The stability of the device due to RC network is proved by a power combination circuit. This makes the power transistor very suitable for applications in microwave high power HBT amplifiers.

Publication Source (Journal or Book title)

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

First Page

2075

Last Page

2079

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