Antireflection coating for photo-pumped IV-VI semiconductor Light Emitting Devices
Document Type
Conference Proceeding
Publication Date
12-1-2006
Abstract
An antireflection coating material for optically pumped group IV-VI lead-chalcogenide semiconductor light emitting devices has been proposed. The coating has been used to increase the photo-pumping efficiency. Theoretical model showed that with the proposed AR coating with a quarter wavelength thickness, 0.008% reflectivity could be achieved in the 980nm-982nm wavelength region. The antireflection property of the coated film was investigated by FTIR-spectroscopic reflectance measurement. Room temperature continuous-wave photoluminescence measurement from AR-coated multiple quantum well structures showed up to 4-times increment in the PL intensity, compared to uncoated ones.
Publication Source (Journal or Book title)
Proceedings of SPIE - The International Society for Optical Engineering
Recommended Citation
Ray, D., Guan, Z., Zhao, F., Jain, S., Mukherjee, S., Li, B., & Shi, Z. (2006). Antireflection coating for photo-pumped IV-VI semiconductor Light Emitting Devices. Proceedings of SPIE - The International Society for Optical Engineering, 6368 https://doi.org/10.1117/12.686486