AlGaN/GaN HEMTs power amplifier MIC with power combining at C-band

Authors

Xiaojiang Yao, Institute of Microelectronics Chinese Academy of Sciences
Bin Li, Longrui Microelectronic Corporation
Yanhu Chen, Institute of Microelectronics Chinese Academy of Sciences
Xiaojuan Chen, Institute of Microelectronics Chinese Academy of Sciences
Ke Wei, Institute of Microelectronics Chinese Academy of Sciences
Chengzhan Li, Institute of Microelectronics Chinese Academy of Sciences
Weijun Luo, Institute of Semiconductors Chinese Academy of Sciences
Xiaoliang Wang, Institute of Semiconductors Chinese Academy of Sciences
Dan Liu, Institute of Microelectronics Chinese Academy of Sciences
Guoguo Liu, Institute of Microelectronics Chinese Academy of Sciences
Xinyu Liu, Institute of Microelectronics Chinese Academy of Sciences

Document Type

Article

Publication Date

4-1-2007

Abstract

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency (PAE) of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.

Publication Source (Journal or Book title)

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

First Page

514

Last Page

517

Recommended Citation

Yao, X., Li, B., Chen, Y., Chen, X., Wei, K., Li, C., Luo, W., Wang, X., Liu, D., Liu, G., & Liu, X. (2007). AlGaN/GaN HEMTs power amplifier MIC with power combining at C-band. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 28 (4), 514-517. Retrieved from https://repository.lsu.edu/ag_exst_pubs/811